P-type behavior of Sb doped ZnO from p-n-p memory structure

Antimony (Sb) doped p-type ZnO was studied by using Sb-ZnO/ZnO/Sb-ZnO p-n-p structure. Secondary ion mass spectrometry result confirmed the formation of the structure. Rectifying current-voltage characteristics between Sb-ZnO and undoped ZnO layers were achieved, proving the p-n junction was formed. The p-type behavior from the p-n-p structure was studied by using the capacitance-voltage measurement and small signal model. The voltage operation led to the charging/discharging of the structure, showing nonvolatile memory effect. Very long retention time was achieved. This research suggests that p-type ZnO can be evaluated by a p-n-p structure, which could be promising for future nonvolatile memory applications. VC 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4769097]